| PART |
Description |
Maker |
| M29F800D M29F800DB M29F800DB55N1F M29F800DT90M6E - |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
|
ST Microelectronics
STMicroelectronics N.V.
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F800DT_06 M29F800DB M29F800DB55M1E M29F800DB55M |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W800AB M29W800AB100M1T M29W800AB100M5T M29W800A |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M28W800CT M28W800CB M28W800CT100N1T M28W800CT100N6 |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
8 MBIT (512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27W016-100B1 M27W016-100M1 M27W016-100N1 M27W016- |
16 MBIT (1MB X16) 3V SUPPLY FLEXIBLEROM™ MEMORY
|
ST Microelectronics
|
